PART |
Description |
Maker |
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
80CNQ045 80CNQ035 80CNQ040 80CNQSM 80CNQ 80CNQSL 8 |
to 85C, Low Ripple & Noise, High Efficiency up to 82%, Low Profile Plastic Case, Single & Dual Ouputs SCHOTTKY RECTIFIER 45V 80A Schottky Common Cathode Diode in a D61-8-SM package 45V 80A Schottky Common Cathode Diode in a D61-8-SL package 35V 80A Schottky Common Cathode Diode in a D61-8 package 40V 80A Schottky Common Cathode Diode in a D61-8 package 45V 80A Schottky Common Cathode Diode in a D61-8 package
|
IRF[International Rectifier]
|
NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
DL-3147-021 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|